In the legacy 8-bit MCU IDE, there is an option to upload the contents of the memory to a text file. This can be useful to record the firmware image on a device:
However, the format that is produced is non-standard - every byte of flash is recorded in text, separated with a new line, e.g.:
00 00 82 20 81 02 41 03 00 80 00 20 c0 02 40 09 00 00 02 20 80 00 00 02 02 80 12 ... etc.
It may be useful to convert this format into a binary format. Attached to this case is an executable, as well as its python script source, that performs this function. The usage for this executable is:
MemoryUpload2Bin.exe -m <path to memory upload txt> -b <path to binary to be created>
Binary files can be generated from several toolsets, or even by uploading the memory contents of a device using Simplicity Studio. However, it may be useful to convert these .bin files into a .hex file. An executable, as well as its python script source, has been attached to this article to perform this task.
The usage of this file is:
Bin2Hex.exe -b <path to binary file> -o <path to hex to be created>
How to understand ESD information of EFM8LB1 in Qual report?
Get EFM8LB1x_AEC_Qual_Report.pdf from RoHS Information web page.
The classification in the last column listed are the AEC classification for which voltage level passed. Silicon Labs standard was to list the classifications, not the passing voltages.
ESD-HBM refer to the test condition listed which is AEC-Q100-002. In section 3.0 on page 5 of this document it points to JS-001. That means the JEDEC document should apply here. From the classification level table as below, the Class 3A is a rated 4000 to < 8000V.
For ESD-CDM the reference document is AEC-Q100-011. Class C6 is rated ≥1000V (section 5 on page 12).
The Derivative ID in the read-only register DERIVID can be used by firmware to identify which device in the product family the code is executing on, also the debugger can get the Derivative ID information through the C2 debug interface.
Below is the list of the Derivative IDs of EFM8LB1xFxxES1.
What is the maximum value to use for a GPIO pull-up resistor on EFM8SB1 under 3.3V VDD?
Maximum pull-up resistor value for EFM8SB1 is: 570k ohms
Use of an external pull-up resistor instead of the internal pull-up on an EFM8SB1 GPIO provides an opportunity for reduced current draw in certain applications, particularly in battery powered designs. The reason for this is the maximum value resistance that works as a pull-up for an EFM8SB1 GPIO pin is larger than the internal pull-up resistance listed in the EFM8SB1 datasheets (around 165k ohms), which equates to significant power savings in which one or more pull-up or pull-down resistors are frequently drawing current. The typical 165k ohm internal pull-up resistance was calculated based on the IPU data in table 4.15 of the datasheet.
R_PULL_UP = 3.3V /2 0uA = 165k ohms.
For example, a battery operated open / closed sensor switch may be required to have a pull-up on the switch circuit. The firmware may be monitoring for a high level on the switch / GPIO circuit. In the case of a normally closed switch, when the switch is engaged, the resulting circuit to ground through the switch is detected by the firmware and acted upon. Depending upon how often or how long the switch is activated, the resulting power drain through the pull-up could shorten the overall lifespan of the battery. In this type of situation, use a large value external resistor instead of the internal pull-up configuration of the GPIO pin in order to reduce the current draw and extend battery life.
To arrive at 570k ohms conclusion as the maximum safe resistor pull-up value, we first determine the GPIO maximum input leakage current. Characterization testing of Engineering IC test lots have revealed an upper limit of 1 uA for EFM8SB1 devices.
Refer to the datasheet table 4.15 for Input leakage current (ILK), Input high voltage (VIH).
Having determined the leakage current, we could then get the minimum input high voltage for the GPIO in table 4.15 under VDD operating voltage 3.3V, the value is VDD-0.6. This indicate the allowable voltage drop across the external pull-up is 0.6V. By using Ohm’s Law to divide the voltage drop of the external pull-up by the threshold leakage current value and multiplying the result by 0.95, we safely determine the appropriate pull-up resistor value with a 5% margin.
0.6 V / 0.000001 A * 0.95 = 570k ohms