A HCSL clock can be applied at IN2, IN1, or IN0 of Si5341. Regarding to the termination, just use an AC blocking cap in series with each input. This is present a high impedance to the PCB trace and should be what the customer needs since they have source side impedance matching. You can remove the 100 Ohm resistor between IN+ and IN- if the source is terminated properly.
Or you can put the 100 Ohm resistor on the other side of the AC coupling caps but keep the 100 Ohm resistor within 5 mm of the input pins.
Package: All devices with the QFN packages use NiPdAu plating.
Thickness: Following table gives details about the thickness of different materials:
Ni
10-20 µin
Pd
0.1-0.5 µin
Au-Ag
Flash (<<0.1 µin)
Devices: All the devices from the Si534x (Si5340/41/42/44/45/46/47/48) family, the external crystal devices from the Si539x (Si5391/92/94/95/96/97) family and the Si5381/82/86 devices have the above terminal finish.
Package: All devices with the LGA packages use the Electroplated Ni/Au plating.
Thickness: Following table gives details about the thickness of different materials:
Ni
4-20 µm
Au
0.4-1.3 µm
Devices: The integrated crystal devices from the Si539x (Si5392/94/95/95/97) and the Si5383/83/88/89 devices have the above terminal finish.
If more details are required regarding device composition, please refer our RFI portal. Following are the steps to access the same:
Timing Knowledge Base
HCSL Input Termination of Si5340/41
A HCSL clock can be applied at IN2, IN1, or IN0 of Si5341. Regarding to the termination, just use an AC blocking cap in series with each input. This is present a high impedance to the PCB trace and should be what the customer needs since they have source side impedance matching. You can remove the 100 Ohm resistor between IN+ and IN- if the source is terminated properly.
Or you can put the 100 Ohm resistor on the other side of the AC coupling caps but keep the 100 Ohm resistor within 5 mm of the input pins.
Terminal Finish for the Si534x/8x/9x family devices
Package: All devices with the QFN packages use NiPdAu plating.
Thickness: Following table gives details about the thickness of different materials:
Ni
10-20 µin
Pd
0.1-0.5 µin
Au-Ag
Flash (<<0.1 µin)
Devices: All the devices from the Si534x (Si5340/41/42/44/45/46/47/48) family, the external crystal devices from the Si539x (Si5391/92/94/95/96/97) family and the Si5381/82/86 devices have the above terminal finish.
Package: All devices with the LGA packages use the Electroplated Ni/Au plating.
Thickness: Following table gives details about the thickness of different materials:
Ni
4-20 µm
Au
0.4-1.3 µm
Devices: The integrated crystal devices from the Si539x (Si5392/94/95/95/97) and the Si5383/83/88/89 devices have the above terminal finish.
If more details are required regarding device composition, please refer our RFI portal. Following are the steps to access the same:
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