Si823Hx Automotive Isolated Gate Drivers

Si823Hx automotive devices are robust gate drivers for silicon-, GaN- or SiC-based electric vehicle systems. Features include a robust 30 V driver VDD capability, low latency for tighter loop control, noise filtering; high CMTI of 125 kV/µs, -5 V voltage withstand on output pins and over-temperature protection. A driver boost stage provides an increased current drive capability during the Miller plateau region for faster turn-on times. Based on our proprietary CMOS capacitive isolation technology, Si823Hx isolated gate drivers deliver superior performance with robust isolation rating to enable driving state-of-the-art GaN or SiC FETs for maximizing system efficiency, while ensuring safety with features such as UVLO protection and dead-time programmability.

Symmetric peak current
4 A
CMTI
125 kV/µs
Automotive grade
AEC-Q100 qualification

Common Specs

  • True automotive grade products with automotive qualification, manufacturing, production test, and support
  • AEC-Q100 qualification
  • PPAP documentation and material listing system support (IMDS, CAMDS)
  • –40 to +125 °C temperature range
  • Single or dual isolated drivers in one package
    • 2.5 kVrms and 3.75 kVrms isolation options
  • DIS or EN pin for asynchronous shutdown option
  • VDDI of 3.0 V – 5.5 V
  • PWM and dual driver versions
  • 4.0 A sink/source peak output
  • 30 ns max propagation delay
  • Transient immunity: >125 kV/μs
  • Deglitch and noise filter options for robust operation in noisy environments
  • Robust 30 V driver side supply
  • Over temperature protection
Find the Right Automotive Si823Hx Device Select Columns
Select Columns
Part Number Isolation Rating (kVrms) Peak Output Current (A) UVLO Voltage (V) Input Type Output Configuration Package Type
2.5 4.0 8 VIA, VIB Dual Driver NB SOIC16

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