The Si8273GBD-IS1 provides options for either a single driver or a combination of two 4 A isolated drivers in a single package for isolated gate drive applications. The Si8273GBD-IS1, with its high performance noise immunity, eliminates the risk posed by faster switching speeds. The high noise transients generated by the faster switching will not affect signal integrity through the driver, thereby eliminating the risk of loss of modulation. The very high latch-up spec of 400 kV/µs makes the Si8273GBD-IS1 extremely robust and will prevent permanent latch-up damage. The Si8273GBD-IS1 has an EN (active high) pin, UVLO fault protection, a de-glitch feature for filtering noisy inputs and highly precise dead time (DT pin) programmability. With this feature, users can precisely control the “dead time” between the two drivers switching to optimize system efficiency and safety. The drivers operate with a wide range of 2.5 V - 5.5 V input VDD and a maximum drive supply voltage of 3 V. The isolation technology offers low EMI emissions, long lifetimes, fast and accurate timing specs and a wide temperature range of -40°C to +125°C. They are offered in a choice of compact packages like NB SOIC (8 and 16 pin) and a compact 5 x 5 mm LGA.