I have a gate driver component, with a different suffix but I dont find anywhere what is the actual difference, and what does the suffix mean.
My components are the following:
We are planning on replacing digital isolators on a product range and need some guidance as to the suitability of the Si replacements. We have identified a couple of automotive approved parts as follows and would like confirmation that they are suitable for the stated isolation:
SELV to HV 400V Reinforced Isolation - Si8622ED-AS
SELV to HV 800V Reinforced Isolation - Si8622ET-AS
Please could you confirm that the parts selected are appropiate for the isolation requirements.
Also are both parts available with default output state low as there does not appear to be an option for this in table 1.2 of the datasheet?
I am using Si8431 isolator for my RS485 circuits. Sometimes Si8431 isolators are broken after a while. I mean it is gone! Maybe because of ESD or over current or something else. I m not sure why this happen. The datasheet of Si8431 is writing "Not recommended for new designs". Why is not it recommended? Does it have problem related my situation.
Can I use VDDA, VOA, GNDA for low side mosfet and VDDB, VOB, GNDB for hi side mosfet? Bootstrap diode will be connected to VDDB. Power suply +50V and -50V.
If yes, this is also true for Si 827x series?
So, let me explain reasons.
I build full bridge class D power amp.
And will be good, if each half bridge will be mirrored to another half bridge on print board. It is possible if one Si8427 in normal connection to output mosfet, and another with mirrored.
Hi, I am interfacing a TI balance charger that will report status by SMBUS. It is running some high current motors in another section of the device and the charger is the central return for power/ground for all systems. The SMBUS is unpowered and I have SDA, SCL, and GND from the charger board going to my microcontroller. I am concerned about EMI reaching my microcontroller if I connected to the SMBUS directly. I am a little confused on the benefits of a fully isolated power supply, vs the practical EMI noise possible.
I was thinking of dropping the microcontroller system 3v3 to the VDD for the SMBUS side through a diode, maybe adding a bulk cap. This would then prevent any spikes returning into the microcontroller system and maybe help prevent significant surges from the charger. I know there are a lot of dumb isolation designs out there, but this one will sorta work I think. Am I taking crazy pills?
any app engineer can tell us what is the nature of the output devices in the Si827x drivers? Specifically, judging from their symbols, one would conclude that there is no possibility of reverse conduction in these devises- neither through a body diode nor through a parasitic path. One important consequence of this will be that we can have a negative voltage at node B of the output without problem. True?
1. What is the maxim duty cycle of SI88621ED-IS (internal limit)?
2.How to work for PWM control from empty load to full load? The frequency is constant ?
3.The min PWM width is 250ns ? or other figure ?
What is the ESD class of Si86xx series parts?
Where would I find documentary evidence for this?
Hello every one
I'm designing a half bridge converter with input of 450V and 4KW power ( 250KHZ<Fsw<350KHZ) using sic mosfets like this or similar.
I'm thinking about using si8274 due to its high CMTI, Fast switching timings, suitable gate driver current and deat time control btw high and low side mosfets.
regarding using SIC MOSFET specifically, it is mandatory to pull down mosfet gate voltage to negative (-3 to -5) due to low Vth of sic mosfet.
Also fast switching will produce higher ringing that further mandates pulling the gate voltage to negative, to avoid false triggering of the gate.
my questions are,
1 - how to supply si8274 negative voltage for both high and low sides of the driver ?
2- how to add short circuit protection function, Like soft DESAT (usually used for IGBTs) to SIC mosfets?
appreciating any help
Currently, we are using below isolators in the same single PCB.
SI8661BB-B-IS1 = 2 nos
SI8662BB-B-IS1 = 1 no
We have given, supply voltage 5V and 3.3V DC from the DC/DC convertor.
As given in the datasheet, Do we need to use supply bypass capacitors for 3 IC's Seperately?
Since, 5V and 3.3V DC supplies are shared together, can we use bypass capacitors only for one IC?
Kindly give your valuable feedback.
Hello. Si890x has 0.5 PGA setting. Does it mean it's possible to measure input voltage greater than Vref? If not how can this gain to be used?
I am working on a simulation and I am new to using Ibis models.
I am using the model SI8261BXD_C_IS_30V_Driver_Type und Anode_Typ.
My Problem is how to understand which Pin are connected to what.
In the ibis file the pins are given:
[Pin] signal_name model_name R_pin L_pin C_pin
1 ANODE anode
2 NC NC
3 CATHODE GND
4 GND GND
5 VO driver
6 VDD POWER
but looking at the PSPICE Modell there are only driver typ INPUT, OUTPUT, ENABLE and the anode typ INPUT. How do I translate the pins?
Many thanks to any helpful answer!
1. The source and sink current of isolated driver of Si827x are 1.8A and 4A respectively, but the fall time is larger than the rising time. This phenomenon is quite different from drivers manufactured by TI, Maxim and so on.
2. The load used to test the rise and fall time of Si827x is only 200pF, while the typical capacitance of MOSFET or GaN are 1nF. Even with 200pF capacitance, the rise and fall time is still larger than the driver of LM5113 from TI whose source and simk current is 1.2A and 5A respectively with load capacitance 1000pF.
Can anybody help to explain this!