Hi

when i used si827x to driving GaN device, the driving waveform shows that source ability does not meet the IOH spec. at 0ns ~ 5ns.

I hope siliconlab can provide the transient ability curve. That will be great if can provide Spice model (only the driving part).

Thank you.

 

 

As per truth table in datasheet Si827x(Page No:12),The state of Voa and Vob are mentioned in the condition of VDDA and VDDB powered.

If VDDA and VDDB are unpowered during start up,what would be the state of Voa and Vob?

 

Hi Silabs,

I am using SI8602AC-B in our design for isolating I2C signals.

SCL is unidirectional and SDA is bidirectional.

Design flow is like ADC-> SI8602AC -> MCU(ATSAME54)

ADC supply voltage is 5V and MCU is 3.3V

1. Does SI8602 can act as a voltage level translator that convert 5V I2C to 3.3V I2C?

2. Can BVDD and AVDD be different?

Attached snippet of my SCH.

 

Please respond... Thanks 

 

 

现象：

为提高芯片的抗浪涌能力，电路设计使用外部电桥加浪涌的结构，整流后的电压直接连接到VPOSF。下面电路图中未焊接R27，R28，R29，R30.可靠性实验发现在50°和60°的环境中。设备启动异常，出现十分钟设备才上电或者长时间死掉。在常温下，用热风枪保持持续对芯片加热10秒，发现不能正常启动。去掉外部电桥，焊接上R27到R30电阻，同样的加热方式，设备能在3秒内启动

问题

为什么si3402用内部电桥和不用内部电桥会导致热启动问题？

Is it possible for these isolators to be operated with different supply voltages? For example: VDD1=5.0V, VDD2=3.3V.

And, if you have something I must pay attention or drawbacks when i use them in such way, please let me know it.

Dear sir/madam,

we are planning to use Si8233BD-D-IS driver for one of our motor inverter project. in the datasheet , it is specified as High electromagnetic immunity in the key features. 

I want to know, this driver will protect against the overshoots( that may cause EMI) during switching transitions.

Also please provide the maximum active current values for both input and output side power supplies. typical values only provided in data sheet.

Regards,

Kalyanraj D

Hello,

This is with reference to the Si824x reference kit.

1. In order to modify the gain, would it be correct to change R29 and R30 (4.99kohms), such that doubling the value will double the gain?

2. For bridge application, what would be a the recommended: use two mono channels with 180deg phase shifted signals or use the unused pin 8 of the comparator to drive another half bridge using a 2nd  Si824x, in which case the feedback of the 2nd half bridge will drive the non-inverting pin of the error amplifier (IC17B/ 18B) as shown in the attachment?

 

Thanks!!

Ranajit.

Can the external mosfet on the Si8710 just be treated like a standard mosfet? For instance, can I use it in the open drain or open source configuration? I see references to it being an open collector (think you mean open drain by the way) only. 

We are presently using a Si8931 isolated amplifier for high-speed measurements in a high-power motor drive.

One issue we are facing with our system is the possibility of the input amplifier to be supplied with a negative voltage lower than the min -0.5V stated in the data sheet.

The input source voltage can be as low as -4V for 1% of the time and -1.5V for up to 80% of the time.

Can we protect the amplifier with an external series resistor and how can we evaluate its value?

Hello everyone,

I am totally new to this forum looking for a help. Any tips and advice regarding my issue would be appreciated. I am jacksonlevi, working in a Corporate animation Company. I wanted to know that could the VDDA and GNDA actually be configured such that if, for example, a +15V/-5V bi-polar type biasing be fed into the chip and the source/emitter return of the device connected to separate neutral point?Or a different way could be that a 20V supply be placed between those pins, then using a secondary zener diode with resistors and capacitors create a +15V/-5V gate biasing ckt w/ a derived, floating source/emitter return point.Is there anything in the chip itself that would prevent negative biasing or reverse current flow? I have serached for this issue but did not find any right solution. Please help me

Any help would be greatly appreciated!!

Thank you.

Hello,

We have a problem with si3402-B based PoE circuit. Some of devices are producing significantly notable sound when working. Some of them just light buzzing.
It seems there is an oscilation over optocoupler feedback and isolation transformer is making the sound. We are using PC3H7J00000F optocoupler. Schematic is attached.

Could you give us some advice how to eliminate the problem.

Thank you.

 

  

In a safety-critical application the Si5752 controls the gate of a MOSFET. To be sure that the MOSFET is certainly always open, ie that there are no charges in the gate that can activate it spuriously, it is not very clear if the output of the Si8752 guarantees this function in the event that its input is not activated or if it is better to put a resistance of some MOhm between gate and source or a FET. In the data sheet, too, the activation mechanism of the MCap1, -2 inputs is not very clear. Are they just dynamic and their action mutually exclusive with their own device input activation?

I would like to ask if the SI8431BB-D-IS1 and SI8431BB-C-IS1 can look different, because I bought the SI8431BB-D-IS1, but when I give the EN1 pin low, A3 is low. Not high resistance, I guess it may be SI8431BB-C-IS1, so I would like to ask if the two appearances can be seen to distinguish it?

Hi,

We are using the SI3404 chip to use POE, When we used the standard PoE injectors, it works perfectly. 

But when we used the non-standard PoE injectors,  the chip would burn out  occasionally.

Our design is a reference of Si3404-Buck EVB board.  Is the SI3404 not support the non-standard PoE injectors ?

Thank you for your Help.